Layer-by-layer thinning of MoS2by thermal annealing
نویسندگان
چکیده
منابع مشابه
Low-temperature atomic layer epitaxy of AlN ultrathin films by layer-by-layer, in-situ atomic layer annealing
Low-temperature epitaxial growth of AlN ultrathin films was realized by atomic layer deposition (ALD) together with the layer-by-layer, in-situ atomic layer annealing (ALA), instead of a high growth temperature which is needed in conventional epitaxial growth techniques. By applying the ALA with the Ar plasma treatment in each ALD cycle, the AlN thin film was converted dramatically from the amo...
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ژورنال
عنوان ژورنال: Nanoscale
سال: 2013
ISSN: 2040-3364,2040-3372
DOI: 10.1039/c3nr03101b